Where is EF located in the energy band of silicon, at 300K with n = 4x1018 cm–3 ? and for p = 2x1014cm–3 ? [ni = 1.5x 1015 cm-3 ]
engineering
Description
1. Finding the Fermi Level in Si
Where is EF located in the energy band of silicon, at 300K with n = 4x1018 cm–3 ? and for p = 2x1014cm–3 ? [ni = 1.5x 1015 cm-3 ]
2. A piece of silicon doped with phosporus (ND = 2x1017 cm–3 ) is 200 µm long, 10 µm wide and 1 µm thick. Calculate the resistance and current when contacted at each end with 8 V supply. [ Take mobility of electrons to be 750 cm2 /V-s]
3. What is the electron concentration in an P-type semiconductor with 2.5x1013 cm–3 of donors?
4. State 3 application of diode and explain 1.
5. 3.5 V is applied across a 1um piece of n-type silicon device. The doping concentration is ND = 1.5x 1017 cm-3
(a) If the transit time for an electron is 5ps. Calculate the average drift velocity of an electron in the device
(b) What is the electron mobility
(c) Calculate the electron diffusion coefficient
(d) Determine the diffusion current at the midpoint of the bar
(E) Determine the drift current
